STGYA50M120DF3
STGYA50M120DF3
ПроизводительSTMicroelectronics
Партномер производителяSTGYA50M120DF3
ОписаниеTransistors/Thyristors ST STGYA50M120DF3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | STMicroelectronics |
| Вес | 6.9 |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Type | FS(Field Stop) |
| Power Dissipation (Pd) | 535W |
| Collector Current (Ic) | 100A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Diode Reverse Recovery Time (Trr) | 325ns |
| Turn?off Delay Time (Td(off)) | 258ns |
| Turn?off Switching Loss (Eoff) | 3.2mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Turn?on Delay Time (Td(on)) | 38ns |
| Total Gate Charge (Qg@Ic,Vge) | 194nC |
| Turn?on Switching Loss (Eon) | 2mJ |
| Pd- Power Dissipation | 535W |
| Current - Collector(Ic) | 100A |
| Gate Charge(Qg) | 194nC |
| Td(off) | 258ns |
| Td(on) | 38ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 325ns |
| Switching Energy(Eoff) | 3.2mJ |
| Turn-On Energy (Eon) | 2mJ |