STGYA75H120DF2
STGYA75H120DF2
ПроизводительSTMicroelectronics
Партномер производителяSTGYA75H120DF2
ОписаниеTransistors/Thyristors ST STGYA75H120DF2
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | STMicroelectronics |
| Вес | 12.5 |
| Operating Temperature | -55℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 750W |
| Voltage - Forward(Vf) | 3.8V@75A |
| Current - Collector(Ic) | 75A |
| Vce Saturation(VCE(sat)) | 2.6V@75A,15V |
| Td(off) | 366ns |
| Td(on) | 61ns |
| Reverse Transfer Capacitance (Cres) | 146pF |
| Reverse Recovery Time(trr) | 356ns |
| Switching Energy(Eoff) | 3.9mJ |
| Turn-On Energy (Eon) | 4.3mJ |
| Output Capacitance(Coes) | 420pF |
| Current- Forward(If) | 75A |
| Input Capacitance(Cies) | 6.3nF |
| Pulsed Current- Forward(Ifm) | 300A |