STGE200NB60S
STGE200NB60S
ПроизводительSTMicroelectronics
Партномер производителяSTGE200NB60S
ОписаниеTransistors/Thyristors ST STGE200NB60S
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | STMicroelectronics |
| Вес | 38.5 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Pd- Power Dissipation | 600W |
| Current - Collector(Ic) | 200A |
| Vce Saturation(VCE(sat)) | 1.6V@100A,15V |
| Gate Charge(Qg) | 560nC@15V |
| Td(off) | 2.4us |
| Td(on) | 64ns |
| Reverse Transfer Capacitance (Cres) | 95pF |
| Switching Energy(Eoff) | 59mJ |
| Turn-On Energy (Eon) | 11.7mJ |
| Output Capacitance(Coes) | 1100pF |
| Input Capacitance(Cies) | 1.56nF |