MIP50R12E2ATN-BP
MIP50R12E2ATN-BP
ПроизводительMCC(Micro Commercial Components)
Партномер производителяMIP50R12E2ATN-BP
ОписаниеTransistors/Thyristors MCC MIP50R12E2ATN-BP
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MCC(Micro Commercial Components) |
| Вес | 1 |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Type | - |
| Power Dissipation (Pd) | 288W |
| Collector Current (Ic) | 50A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance (Cies@Vce) | 2.6nF@25V |
| Pd- Power Dissipation | 288W |
| Current - Collector(Ic) | 50A |
| IGBT Type | - |
| Input Capacitance(Cies) | 2.6nF@25V |