IKQ140N120CH7XKSA1
IKQ140N120CH7XKSA1
ПроизводительInfineon Technologies
Партномер производителяIKQ140N120CH7XKSA1
ОписаниеTransistors/Thyristors Infineon IKQ140N120CH7XKSA1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Infineon Technologies |
| Вес | 6.8 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@2.24mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 962W |
| Voltage - Forward(Vf) | 2.5V@140A |
| Current - Collector(Ic) | 175A |
| Vce Saturation(VCE(sat)) | 2.15V@140A,15V |
| Gate Charge(Qg) | 970nC@15V |
| Td(off) | 541ns |
| Td(on) | 68ns |
| Reverse Transfer Capacitance (Cres) | 94pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 144ns |
| Switching Energy(Eoff) | 3.38mJ |
| Turn-On Energy (Eon) | 8.84mJ |
| Output Capacitance(Coes) | 317pF |
| Current- Forward(If) | 170A |
| Input Capacitance(Cies) | 18.5nF |
| Pulsed Current- Forward(Ifm) | 560A |