IKW40N120CH7XKSA1
IKW40N120CH7XKSA1
ПроизводительInfineon Technologies
Партномер производителяIKW40N120CH7XKSA1
ОписаниеTransistors/Thyristors Infineon IKW40N120CH7XKSA1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Infineon Technologies |
| Вес | 8.68 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@0.64mA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 330W |
| Voltage - Forward(Vf) | 3V@40A |
| Current - Collector(Ic) | 82A |
| Vce Saturation(VCE(sat)) | 2.15V@40A,15V |
| Gate Charge(Qg) | 290nC@15V |
| Td(off) | 336ns |
| Td(on) | 36ns |
| Reverse Transfer Capacitance (Cres) | 29pF |
| Reverse Recovery Time(trr) | 120ns |
| Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 1.69mJ |
| Output Capacitance(Coes) | 108pF |
| Current- Forward(If) | 66A |
| Input Capacitance(Cies) | 5nF |
| Pulsed Current- Forward(Ifm) | 160A |