SDM05M50DASTR
SDM05M50DASTR
ПроизводительHangzhou Silan Microelectronics
Партномер производителяSDM05M50DASTR
ОписаниеTransistors/Thyristors Hangzhou Silan Microelectronics SDM05M50DASTR
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Hangzhou Silan Microelectronics |
| Вес | 4.417 |
| Operating Temperature | - |
| Type | MOSFET |
| Features | - |
| configuration | Three-phase bridge |
| Voltage - Supply | - |
| Voltage - Isolation | 1500Vrms |
| Pd- Power Dissipation | - |
| RDS(on) | - |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5A |
| Frequency - Switching | - |
| Quiescent Current(Iq) | - |
| High-side Bias Voltage(Vbs) | - |