SPE20S60F-E
SPE20S60F-E
ПроизводительSPEIPM
Партномер производителяSPE20S60F-E
ОписаниеTransistors/Thyristors SPEIPM SPE20S60F-E
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SPEIPM |
| Вес | 21.88 |
| Operating Temperature | -20℃~+125℃ |
| Type | IGBT |
| Features | Undervoltage lockout with hysteresis;Overcurrent Protection;Overtemperature protection with hysteresis;Short-Circuit Protection |
| configuration | Three-phase bridge |
| Voltage - Supply | 300V~400V |
| Voltage - Isolation | 1500Vrms |
| Pd- Power Dissipation | 50W |
| RDS(on) | - |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 20A |
| Frequency - Switching | 20kHz |
| Quiescent Current(Iq) | 1mA |
| High-side Bias Voltage(Vbs) | 13.5V~16.5V |