SODDB3T RHG
SODDB3T RHG
ПроизводительTaiwan Semiconductor
Партномер производителяSODDB3T RHG
ОписаниеDiodes Taiwan Semiconductor SODDB3T RHG
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Taiwan Semiconductor |
| Вес | 0.034 |
| Breakover Current (Ibo) | 15uA |
| Repetitive Peak On-state Current (Itrm) | 2A |
| Output Voltage | 5V |
| Leak Current | 15uA |
| Operating Junction Temperature Range | -40℃~+125℃ |
| Breakover Voltage VBO(Range Value) | 30V~34V |
| Rise Time(tr) | 1.5us |
| Dynamic Breakover Voltage | 9V |
| Breakover Voltage Symmetry | 2V |
| Breakover Voltage VBO(Typ) | 32V |