MLG15T65FUL
MLG15T65FUL
ПроизводительMinos
Партномер производителяMLG15T65FUL
ОписаниеTransistors/Thyristors Minos MLG15T65FUL
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Minos |
| Вес | 3.074 |
| Operating Temperature | -55℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 41W |
| Current - Collector(Ic) | 15A |
| Vce Saturation(VCE(sat)) | 1.8V@15A,15V |
| Gate Charge(Qg) | 44nC@15V |
| Td(off) | 99ns |
| Td(on) | 11ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 58ns |
| Switching Energy(Eoff) | 260uJ |
| Turn-On Energy (Eon) | 210uJ |
| Input Capacitance(Cies) | 892pF |