7MBR75VB120-50

7MBR75VB120-50

ПроизводительFuji Electric
Партномер производителя7MBR75VB120-50
ОписаниеTransistors/Thyristors Fuji Electric 7MBR75VB120-50
DatasheetDatasheet

Характеристики

ПараметрЗначение
КатегорияПрочее
ПроизводительFuji Electric
Вес346.2
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@75mA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Pd- Power Dissipation385W
Voltage - Forward(Vf)2.65V@75A
Current - Collector(Ic)75A
Vce Saturation(VCE(sat))2.8V@75A,15V
Td(off)530ns
Td(on)390ns
Reverse Transfer Capacitance (Cres)6nF
IGBT TypeIGBT Module
Reverse Recovery Time(trr)350ns
Current- Forward(If)75A
Pulsed Current- Forward(Ifm)520A