MLG30N60FDL
MLG30N60FDL
ПроизводительMinos
Партномер производителяMLG30N60FDL
ОписаниеTransistors/Thyristors Minos MLG30N60FDL
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Minos |
| Вес | 7.949 |
| Operating Temperature | -55℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Pd- Power Dissipation | 187W |
| Current - Collector(Ic) | 60A |
| Vce Saturation(VCE(sat)) | 2.05V@30A,15V |
| Gate Charge(Qg) | 66nC@15V |
| Td(off) | 68ns |
| Td(on) | 12ns |
| Reverse Transfer Capacitance (Cres) | - |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 193ns |
| Switching Energy(Eoff) | 700uJ |
| Turn-On Energy (Eon) | 600uJ |
| Output Capacitance(Coes) | - |
| Input Capacitance(Cies) | 1.446nF |
| Pulsed Current- Forward(Ifm) | - |
| Collector Cut-Off Current (Ices@Vce) | - |