7MBR50VN120-50

7MBR50VN120-50

ПроизводительFuji Electric
Партномер производителя7MBR50VN120-50
ОписаниеTransistors/Thyristors Fuji Electric 7MBR50VN120-50
DatasheetDatasheet

Характеристики

ПараметрЗначение
КатегорияПрочее
ПроизводительFuji Electric
Вес350
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@50mA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Pd- Power Dissipation280W
Voltage - Forward(Vf)1.7V@50A
Current - Collector(Ic)50A
Vce Saturation(VCE(sat))2.65V@50A,15V
Td(off)530ns
Td(on)390ns
IGBT TypeIGBT Module
Reverse Recovery Time(trr)350ns
Current- Forward(If)50A
Input Capacitance(Cies)4.2nF
Pulsed Current- Forward(Ifm)360A