GD25WD10CTIGR
GD25WD10CTIGR
ПроизводительGigaDevice Semicon Beijing
Партномер производителяGD25WD10CTIGR
ОписаниеMemory GigaDevice Semicon Beijing GD25WD10CTIGR
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | GigaDevice Semicon Beijing |
| Вес | 0.188 |
| Operating Temperature | -40℃~+85℃ |
| Interface | SPI |
| Clock Frequency | 100MHz |
| Memory Size | 1Mbit |
| Data Retention - TDR (Year) | 20 Years |
| Voltage - Supply | 1.65V~3.6V |
| Program / Erase Cycles | 100,000 Cycles |
| Block Erase Time(tBE) | 500ms@(32KB) |
| Page Program time (TPP) | 1.6ms |
| Standby Supply Current | 0.1uA |