MSG55T200HLB3
MSG55T200HLB3
ПроизводительMASPOWER
Партномер производителяMSG55T200HLB3
ОписаниеTransistors/Thyristors MASPOWER MSG55T200HLB3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 12.94 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@4mA |
| Collector-Emitter Breakdown Voltage (Vces) | 2kV |
| Pd- Power Dissipation | 625W |
| Current - Collector(Ic) | 130A |
| Vce Saturation(VCE(sat)) | 7.7V@55A,15V |
| Gate Charge(Qg) | 335nC@15V |
| Td(off) | 230ns |
| Td(on) | 54ns |
| Reverse Transfer Capacitance (Cres) | 83pF |
| Output Capacitance(Coes) | 275pF |
| Input Capacitance(Cies) | 7.3nF |