MLG40T65FDK
MLG40T65FDK
ПроизводительMinos
Партномер производителяMLG40T65FDK
ОписаниеTransistors/Thyristors Minos MLG40T65FDK
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Minos |
| Вес | 7.562 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 300W |
| Voltage - Forward(Vf) | 2.2V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.95V@40A,15V |
| Gate Charge(Qg) | 110nC |
| Td(off) | 90ns |
| Td(on) | 19ns |
| Reverse Recovery Time(trr) | 38ns |
| Switching Energy(Eoff) | 380uJ |
| Turn-On Energy (Eon) | 600uJ |
| Input Capacitance(Cies) | 2.237nF@0V,25V |