YGD65N65U1
YGD65N65U1
Производительluxin-semi
Партномер производителяYGD65N65U1
ОписаниеTransistors/Thyristors luxin-semi YGD65N65U1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | luxin-semi |
| Вес | 6.88 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 272W |
| Voltage - Forward(Vf) | 1.4V@20A |
| Current - Collector(Ic) | 130A |
| Vce Saturation(VCE(sat)) | 2V@65A,15V |
| Td(off) | 150ns |
| Td(on) | 40ns |
| Reverse Transfer Capacitance (Cres) | 35pF |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 1.8mJ |
| Output Capacitance(Coes) | 365pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 4.82nF |
| Pulsed Current- Forward(Ifm) | 60A |