AUGK40N65F1A1
AUGK40N65F1A1
Производительluxin-semi
Партномер производителяAUGK40N65F1A1
ОписаниеTransistors/Thyristors luxin-semi AUGK40N65F1A1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | luxin-semi |
| Вес | 1 |
| Operating Temperature | -40℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 188W |
| Voltage - Forward(Vf) | 2V@40A |
| Current - Collector(Ic) | 40A |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Gate Charge(Qg) | 93nC@15V |
| Td(off) | 169ns |
| Td(on) | 37ns |
| Reverse Transfer Capacitance (Cres) | 37pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 95ns |
| Switching Energy(Eoff) | 880uJ |
| Turn-On Energy (Eon) | 1.52mJ |
| Output Capacitance(Coes) | 82pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 2.035nF |
| Pulsed Current- Forward(Ifm) | 120A |