BGH65N50L1
BGH65N50L1
ПроизводительBestirpower
Партномер производителяBGH65N50L1
ОписаниеTransistors/Thyristors Bestirpower BGH65N50L1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Bestirpower |
| Вес | 1 |
| Operating Temperature | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@500uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 484W |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.75V@50A,15V |
| Gate Charge(Qg) | 135nC@15V |
| Td(off) | 139.7ns |
| Td(on) | 22.2ns |
| Reverse Transfer Capacitance (Cres) | 19pF |
| IGBT Type | FS (Field Stop) |
| Switching Energy(Eoff) | 770uJ |
| Turn-On Energy (Eon) | 740uJ |
| Output Capacitance(Coes) | 73pF |
| Input Capacitance(Cies) | 4.093nF |