MSG200N38HLF4
MSG200N38HLF4
ПроизводительMASPOWER
Партномер производителяMSG200N38HLF4
ОписаниеTransistors/Thyristors MASPOWER MSG200N38HLF4
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 1 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA |
| Collector-Emitter Breakdown Voltage (Vces) | 350V |
| Pd- Power Dissipation | 1.25kW |
| Voltage - Forward(Vf) | 750mV@40A |
| Current - Collector(Ic) | 400A |
| Vce Saturation(VCE(sat)) | 790mV@100A,15V |
| Td(off) | 172ns |
| Td(on) | 38ns |
| Reverse Transfer Capacitance (Cres) | 150pF |
| Reverse Recovery Time(trr) | 43ns |
| Switching Energy(Eoff) | 3.5mJ |
| Turn-On Energy (Eon) | 4.8mJ |
| Output Capacitance(Coes) | 240pF |
| Current- Forward(If) | 200A |
| Input Capacitance(Cies) | 3.264nF |