YGD45N65U1
YGD45N65U1
Производительluxin-semi
Партномер производителяYGD45N65U1
ОписаниеTransistors/Thyristors luxin-semi YGD45N65U1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | luxin-semi |
| Вес | 7.052 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 166W |
| Voltage - Forward(Vf) | 1.9V@45A |
| Current - Collector(Ic) | 90A |
| Vce Saturation(VCE(sat)) | 1.85V@45A,15V |
| Gate Charge(Qg) | 85nC@15V |
| Td(off) | 129ns |
| Td(on) | 48ns |
| Reverse Transfer Capacitance (Cres) | 38pF |
| Switching Energy(Eoff) | 480uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Output Capacitance(Coes) | 98pF |
| Current- Forward(If) | 90A |
| Input Capacitance(Cies) | 2.19nF |
| Pulsed Current- Forward(Ifm) | 135A |