JNG20T65PS1
JNG20T65PS1
ПроизводительJIAENSEMI
Партномер производителяJNG20T65PS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG20T65PS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 2.5 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 125W |
| Voltage - Forward(Vf) | 1.5V@20A |
| Current - Collector(Ic) | 40A |
| Vce Saturation(VCE(sat)) | 2.5V@20A,15V |
| Gate Charge(Qg) | 271nC |
| Td(off) | 71ns |
| Td(on) | 17ns |
| Reverse Transfer Capacitance (Cres) | 7.5pF |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | 410uJ |
| Turn-On Energy (Eon) | 460uJ |
| Output Capacitance(Coes) | 50pF |
| Current- Forward(If) | 20A |
| Input Capacitance(Cies) | 831pF |
| Pulsed Current- Forward(Ifm) | 60A |