JNG20T65FJS1
JNG20T65FJS1
ПроизводительJIAENSEMI
Партномер производителяJNG20T65FJS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG20T65FJS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 2.6 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 53W |
| Voltage - Forward(Vf) | 1.5V@20A |
| Current - Collector(Ic) | 40A |
| Vce Saturation(VCE(sat)) | 1.6V@20A,15V |
| Gate Charge(Qg) | 21nC@15V |
| Td(off) | 120ns |
| Td(on) | 21ns |
| Reverse Transfer Capacitance (Cres) | 13pF |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 370uJ |
| Output Capacitance(Coes) | 72pF |
| Current- Forward(If) | 20A |
| Input Capacitance(Cies) | 1.7nF |
| Pulsed Current- Forward(Ifm) | 80A |