JNG15T65FJS1
JNG15T65FJS1
ПроизводительJIAENSEMI
Партномер производителяJNG15T65FJS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG15T65FJS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 2.6 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 39W |
| Voltage - Forward(Vf) | 1.4V@15A |
| Current - Collector(Ic) | 30A |
| Vce Saturation(VCE(sat)) | 1.6V@15A,15V |
| Td(off) | 104ns |
| Td(on) | 17ns |
| Reverse Transfer Capacitance (Cres) | 15pF |
| Reverse Recovery Time(trr) | 55ns |
| Switching Energy(Eoff) | 270uJ |
| Turn-On Energy (Eon) | 300uJ |
| Output Capacitance(Coes) | 57pF |
| Current- Forward(If) | 15A |
| Input Capacitance(Cies) | 1.055nF |
| Pulsed Current- Forward(Ifm) | 60A |