MSG50T120QLB3
MSG50T120QLB3
ПроизводительMASPOWER
Партномер производителяMSG50T120QLB3
ОписаниеTransistors/Thyristors MASPOWER MSG50T120QLB3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 1 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 521W |
| Voltage - Forward(Vf) | 2.4V@50A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 3.2V@40A,15V |
| Gate Charge(Qg) | 340nC@15V |
| Td(off) | 162ns |
| Td(on) | 13ns |
| Reverse Transfer Capacitance (Cres) | 230pF |
| Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 2.8mJ |
| Output Capacitance(Coes) | 390pF |
| Pulsed Current- Forward(Ifm) | 200A |