MSG120N35HLB3
MSG120N35HLB3
ПроизводительMASPOWER
Партномер производителяMSG120N35HLB3
ОписаниеTransistors/Thyristors MASPOWER MSG120N35HLB3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 1 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 350V |
| Pd- Power Dissipation | 694W |
| Voltage - Forward(Vf) | 950mV@30A |
| Current - Collector(Ic) | 240A |
| Vce Saturation(VCE(sat)) | 1.26V@75A,15V |
| Gate Charge(Qg) | 185nC@15V |
| Td(off) | 102ns |
| Td(on) | 35ns |
| Reverse Transfer Capacitance (Cres) | 182pF |
| Reverse Recovery Time(trr) | 33ns |
| Switching Energy(Eoff) | 3.5mJ |
| Turn-On Energy (Eon) | 6.8mJ |
| Output Capacitance(Coes) | 295pF |
| Current- Forward(If) | 120A |
| Input Capacitance(Cies) | 3.764nF |