MSG10D120HLD0
MSG10D120HLD0
ПроизводительMASPOWER
Партномер производителяMSG10D120HLD0
ОписаниеTransistors/Thyristors MASPOWER MSG10D120HLD0
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 1 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 100W |
| Current - Collector(Ic) | 20A |
| Vce Saturation(VCE(sat)) | 2.5V@15A,15V |
| Gate Charge(Qg) | 80nC@15V |
| Td(off) | 109ns |
| Td(on) | 17.5ns |
| Reverse Transfer Capacitance (Cres) | 60pF |
| IGBT Type | FS (Field Stop) |
| Switching Energy(Eoff) | 930uJ |
| Turn-On Energy (Eon) | 240uJ |
| Output Capacitance(Coes) | 30pF |
| Input Capacitance(Cies) | 900pF |