MSG100T65BLC0
MSG100T65BLC0
ПроизводительMASPOWER
Партномер производителяMSG100T65BLC0
ОписаниеTransistors/Thyristors MASPOWER MSG100T65BLC0
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 1 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 750W |
| Voltage - Forward(Vf) | 1.5V@75A |
| Current - Collector(Ic) | 150A |
| Vce Saturation(VCE(sat)) | 2.3V@100A,15V |
| Gate Charge(Qg) | 340nC@15V |
| Td(off) | 267ns |
| Td(on) | 38ns |
| Reverse Transfer Capacitance (Cres) | 185pF |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 2.45mJ |
| Turn-On Energy (Eon) | 4.65mJ |
| Output Capacitance(Coes) | 410pF |
| Input Capacitance(Cies) | 2.85nF |
| Pulsed Current- Forward(Ifm) | 300A |