MSG120T65HLB3
MSG120T65HLB3
ПроизводительMASPOWER
Партномер производителяMSG120T65HLB3
ОписаниеTransistors/Thyristors MASPOWER MSG120T65HLB3
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 12.364 |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 882W |
| Voltage - Forward(Vf) | 1.8V@30A |
| Current - Collector(Ic) | 240A |
| Vce Saturation(VCE(sat)) | 2.3V@100A,15V |
| Gate Charge(Qg) | 181nC |
| Td(off) | 102ns |
| Td(on) | 53ns |
| Reverse Recovery Time(trr) | 123ns |
| Switching Energy(Eoff) | 3.5mJ |
| Turn-On Energy (Eon) | 6.8mJ |
| Input Capacitance(Cies) | 5.764nF@30V |