MSG50T65QHC0
MSG50T65QHC0
ПроизводительMASPOWER
Партномер производителяMSG50T65QHC0
ОписаниеTransistors/Thyristors MASPOWER MSG50T65QHC0
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MASPOWER |
| Вес | 7.63 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 394W |
| Voltage - Forward(Vf) | 1.7V@50A |
| Current - Collector(Ic) | 100A |
| Vce Saturation(VCE(sat)) | 2V@60A,15V |
| Gate Charge(Qg) | 116nC@15V |
| Td(off) | 231ns |
| Td(on) | 32ns |
| IGBT Type | FS (Field Stop) |
| Reverse Recovery Time(trr) | 198ns |
| Switching Energy(Eoff) | 1.41mJ |
| Turn-On Energy (Eon) | 2.15mJ |
| Input Capacitance(Cies) | 1.6pF@25V |