JNG15T120HJS1
JNG15T120HJS1
ПроизводительJIAENSEMI
Партномер производителяJNG15T120HJS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG15T120HJS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 6.4 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 375W |
| Voltage - Forward(Vf) | 2.3V@15A |
| Current - Collector(Ic) | 30A |
| Vce Saturation(VCE(sat)) | 1.7V@15A,15V |
| Td(off) | 140ns |
| Td(on) | 22ns |
| Reverse Transfer Capacitance (Cres) | 13pF |
| Reverse Recovery Time(trr) | 223ns |
| Switching Energy(Eoff) | 700uJ |
| Turn-On Energy (Eon) | 900uJ |
| Output Capacitance(Coes) | 58pF |
| Current- Forward(If) | 15A |
| Input Capacitance(Cies) | 1.25nF |
| Pulsed Current- Forward(Ifm) | 60A |