JNG15N120HS2
JNG15N120HS2
ПроизводительJIAENSEMI
Партномер производителяJNG15N120HS2
ОписаниеTransistors/Thyristors JIAENSEMI JNG15N120HS2
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 6.6 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Pd- Power Dissipation | 180W |
| Voltage - Forward(Vf) | 2.8V@15A |
| Current - Collector(Ic) | 30A |
| Vce Saturation(VCE(sat)) | 2.7V@15A,15V |
| Td(off) | 135ns |
| Td(on) | 30ns |
| Reverse Transfer Capacitance (Cres) | 110pF |
| IGBT Type | NPT (Non-Punch Through) |
| Reverse Recovery Time(trr) | 240ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Output Capacitance(Coes) | 180pF |
| Current- Forward(If) | 15A |
| Input Capacitance(Cies) | 550pF |
| Pulsed Current- Forward(Ifm) | 45A |