JNG40T65HJU1
JNG40T65HJU1
ПроизводительJIAENSEMI
Партномер производителяJNG40T65HJU1
ОписаниеTransistors/Thyristors JIAENSEMI JNG40T65HJU1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 6.4 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 300W |
| Voltage - Forward(Vf) | 1.5V@40A |
| Current - Collector(Ic) | 80A |
| Vce Saturation(VCE(sat)) | 1.7V@40A,15V |
| Td(off) | 110ns |
| Td(on) | 32ns |
| Reverse Transfer Capacitance (Cres) | 21pF |
| Reverse Recovery Time(trr) | 130ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 1.2mJ |
| Output Capacitance(Coes) | 95pF |
| Current- Forward(If) | 40A |
| Input Capacitance(Cies) | 2.48nF |
| Pulsed Current- Forward(Ifm) | 160A |