JNG30T65HS1
JNG30T65HS1
ПроизводительJIAENSEMI
Партномер производителяJNG30T65HS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG30T65HS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 6.5 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 297W |
| Voltage - Forward(Vf) | 1.5V@30A |
| Current - Collector(Ic) | 60A |
| Vce Saturation(VCE(sat)) | 2.5V@30A,15V |
| Td(off) | 86ns |
| Td(on) | 19ns |
| Reverse Transfer Capacitance (Cres) | 11.8pF |
| Reverse Recovery Time(trr) | 148ns |
| Switching Energy(Eoff) | 500uJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Output Capacitance(Coes) | 98pF |
| Current- Forward(If) | 30A |
| Input Capacitance(Cies) | 1.34nF |
| Pulsed Current- Forward(Ifm) | 90A |