JNG25T65KS1
JNG25T65KS1
ПроизводительJIAENSEMI
Партномер производителяJNG25T65KS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG25T65KS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 1.9 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 138.9W |
| Voltage - Forward(Vf) | 1.65V@25A |
| Current - Collector(Ic) | 50A |
| Vce Saturation(VCE(sat)) | 2.7V@25A,15V |
| Td(off) | 75ns |
| Td(on) | 22ns |
| Reverse Transfer Capacitance (Cres) | 8pF |
| Reverse Recovery Time(trr) | 60ns |
| Switching Energy(Eoff) | 490uJ |
| Turn-On Energy (Eon) | 660uJ |
| Output Capacitance(Coes) | 90pF |
| Current- Forward(If) | 25A |
| Input Capacitance(Cies) | 978pF |
| Pulsed Current- Forward(Ifm) | 75A |