JNG15T65KS1
JNG15T65KS1
ПроизводительJIAENSEMI
Партномер производителяJNG15T65KS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG15T65KS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 1.6 |
| Operating Temperature | -55℃~+150℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 100W |
| Voltage - Forward(Vf) | 1.55V@15A |
| Current - Collector(Ic) | 30A |
| Vce Saturation(VCE(sat)) | 2.5V@15A,15V |
| Td(off) | 94ns |
| Td(on) | 16ns |
| Reverse Transfer Capacitance (Cres) | 7pF |
| Reverse Recovery Time(trr) | 120ns |
| Switching Energy(Eoff) | 320uJ |
| Turn-On Energy (Eon) | 310uJ |
| Output Capacitance(Coes) | 45pF |
| Current- Forward(If) | 15A |
| Input Capacitance(Cies) | 629pF |
| Pulsed Current- Forward(Ifm) | 45A |