JNG10T65DJS1
JNG10T65DJS1
ПроизводительJIAENSEMI
Партномер производителяJNG10T65DJS1
ОписаниеTransistors/Thyristors JIAENSEMI JNG10T65DJS1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | JIAENSEMI |
| Вес | 0.39 |
| Operating Temperature | -40℃~+175℃ |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd- Power Dissipation | 100W |
| Voltage - Forward(Vf) | 1.8V@10A |
| Current - Collector(Ic) | 20A |
| Vce Saturation(VCE(sat)) | 2.2V@10A,15V |
| Gate Charge(Qg) | 28nC@15V |
| Td(off) | 71ns |
| Td(on) | 12ns |
| Reverse Transfer Capacitance (Cres) | 10pF |
| Reverse Recovery Time(trr) | 57ns |
| Switching Energy(Eoff) | 170uJ |
| Turn-On Energy (Eon) | 180uJ |
| Output Capacitance(Coes) | 37pF |
| Current- Forward(If) | 10A |
| Input Capacitance(Cies) | 670pF |
| Pulsed Current- Forward(Ifm) | 30A |