GD25D10BTIGR
GD25D10BTIGR
ПроизводительGigaDevice Semicon Beijing
Партномер производителяGD25D10BTIGR
ОписаниеMemory GigaDevice Semicon Beijing GD25D10BTIGR
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | GigaDevice Semicon Beijing |
| Вес | 0.215 |
| Operating Temperature | -40℃~+85℃ |
| Interface | SPI |
| Clock Frequency | 80MHz |
| Memory Size | 1Mbit |
| Data Retention - TDR (Year) | 20 Years |
| Voltage - Supply | 2.7V~3.6V |
| Program / Erase Cycles | 100,000 Cycles |
| Block Erase Time(tBE) | 400ms@(64KB) |
| Page Program time (TPP) | 700us |
| Standby Supply Current | 5uA |