PTN102G25M15B30
PTN102G25M15B30
Производительprosemi
Партномер производителяPTN102G25M15B30
ОписаниеTransistors/Thyristors prosemi PTN102G25M15B30
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | prosemi |
| Вес | 0.012 |
| Reverse Leakage Current (Ir) | 500nA |
| Level of Protection | IEC 61000-4-2;IEC 61000-4-4;IEC 61000-4-5 |
| Junction Capacitance | 25pF |
| Peak Pulse Power Dissipation (Ppp) | 300W@8/20us |
| Reverse Stand-Off Voltage (Vrwm) | 15V |
| Peak Pulse Current (Ipp) | 6A@8/20us |
| Clamping Voltage | 30V |
| Voltage - Breakdown | 16.7V |