BCZ120N40M1
BCZ120N40M1
ПроизводительBestirpower
Партномер производителяBCZ120N40M1
ОписаниеSilicon Carbide (SiC) Devices Bestirpower BCZ120N40M1
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Bestirpower |
| Вес | 8.072 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Pd- Power Dissipation | 375W |
| RDS(on) | 40mΩ |
| Drain to Source Voltage | 1.2kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Input Capacitance(Ciss) | 1.96nF |
| Output Capacitance(Coss) | 125pF |
| Gate Charge(Qg) | 109nC |
| Reverse Transfer Capacitance (Crss) | 5pF |
| Ciss-Input Capacitance | 1.96nF |