MDDG10R08G
MDDG10R08G
ПроизводительMDD(Microdiode Semiconductor)
Партномер производителяMDDG10R08G
ОписаниеTransistors/Thyristors MDD(Microdiode Semiconductor) MDDG10R08G
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | MDD(Microdiode Semiconductor) |
| Вес | 0.196 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| Pd- Power Dissipation | 69W |
| RDS(on) | 8mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 75A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 2nF |
| Output Capacitance(Coss) | 638pF |
| Gate Charge(Qg) | 41nC@10V |