S2M040150HJ
S2M040150HJ
ПроизводительSichainsemi
Партномер производителяS2M040150HJ
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi S2M040150HJ
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Sichainsemi |
| Вес | 8.413 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 6.4pF |
| Pd- Power Dissipation | 341W |
| Drain to Source Voltage | 1.5kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 72A |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Input Capacitance(Ciss) | 2.11nF |
| Gate Charge(Qg) | 78nC |
| Reverse Transfer Capacitance (Crss) | 6.4pF |
| Ciss-Input Capacitance | 2.11nF |