BMQ100N38
BMQ100N38
ПроизводительBORN
Партномер производителяBMQ100N38
ОписаниеTransistors/Thyristors BORN BMQ100N38
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | BORN |
| Вес | 0.109 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Pd- Power Dissipation | 23W |
| RDS(on) | 9mΩ@10V |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 38A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Input Capacitance(Ciss) | 2.2nF |
| Output Capacitance(Coss) | 445pF |
| Gate Charge(Qg) | 17nC@10V |