GSD11N65E
GSD11N65E
ПроизводительXCH
Партномер производителяGSD11N65E
ОписаниеTransistors/Thyristors XCH GSD11N65E
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | XCH |
| Вес | 0.46 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Pd- Power Dissipation | 96W |
| RDS(on) | 380mΩ@10V |
| Drain to Source Voltage | 650V |
| Number | One N-channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 11A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Input Capacitance(Ciss) | 720pF |
| Output Capacitance(Coss) | 20pF |
| Gate Charge(Qg) | 32nC@10V |