SG2M020170HJ
SG2M020170HJ
ПроизводительSichainsemi
Партномер производителяSG2M020170HJ
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi SG2M020170HJ
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Sichainsemi |
| Вес | 8.337 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF |
| Pd- Power Dissipation | 535W |
| Drain to Source Voltage | 1.7kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 110A |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Input Capacitance(Ciss) | 5.265nF |
| Gate Charge(Qg) | 209nC |
| Reverse Transfer Capacitance (Crss) | 7.5pF |
| Ciss-Input Capacitance | 5.265nF |