SVGP159R3NL5ATR
SVGP159R3NL5ATR
ПроизводительHangzhou Silan Microelectronics
Партномер производителяSVGP159R3NL5ATR
ОписаниеTransistors/Thyristors Hangzhou Silan Microelectronics SVGP159R3NL5ATR
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Hangzhou Silan Microelectronics |
| Вес | 0.224 |
| Operating Temperature | -55℃~+150℃ |
| Type | N-Channel |
| Pd- Power Dissipation | 142W |
| RDS(on) | 9.3mΩ@10V |
| Drain to Source Voltage | 150V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 87A |
| Gate Threshold Voltage (Vgs(th)) | 4.6V@250uA |