SG2M023120J1J
SG2M023120J1J
ПроизводительSichainsemi
Партномер производителяSG2M023120J1J
ОписаниеSilicon Carbide (SiC) Devices Sichainsemi SG2M023120J1J
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Sichainsemi |
| Вес | 2.491 |
| Operating Temperature | -55℃~+175℃ |
| Type | One N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7.4pF |
| Pd- Power Dissipation | 484W |
| Drain to Source Voltage | 1.2kV |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 107A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Input Capacitance(Ciss) | 2.87nF |
| Gate Charge(Qg) | 95nC |
| Reverse Transfer Capacitance (Crss) | 7.4pF |
| Ciss-Input Capacitance | 2.87nF |