RS65R190BD
RS65R190BD
ПроизводительREASUNOS
Партномер производителяRS65R190BD
ОписаниеTransistors/Thyristors REASUNOS RS65R190BD
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | REASUNOS |
| Вес | 0.614 |
| Operating Temperature | -55℃~+150℃ |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Pd- Power Dissipation | 136W |
| RDS(on) | 170mΩ@10V |
| Drain to Source Voltage | 650V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Input Capacitance(Ciss) | 1.49nF |
| Output Capacitance(Coss) | 101pF |
| Gate Charge(Qg) | 36nC@10V |