GC3N150PF
GC3N150PF
ПроизводительSUPSiC
Партномер производителяGC3N150PF
ОписаниеSilicon Carbide (SiC) Devices SUPSiC GC3N150PF
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | SUPSiC |
| Вес | 5.975 |
| Operating Temperature | - |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Pd- Power Dissipation | 35W |
| RDS(on) | - |
| Drain to Source Voltage | 1.5kV |
| Operating Junction Temperature Range | - |
| Current - Continuous Drain(Id) | 3.7A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Input Capacitance(Ciss) | 184pF |
| Output Capacitance(Coss) | 16pF |
| Gate Charge(Qg) | 14nC |
| Reverse Transfer Capacitance (Crss) | 6pF |
| Ciss-Input Capacitance | 184pF |