SP011N02AGHTO
SP011N02AGHTO
ПроизводительSiliup
Партномер производителяSP011N02AGHTO
ОписаниеTransistors/Thyristors Siliup SP011N02AGHTO
DatasheetDatasheet
Характеристики
| Параметр | Значение |
|---|---|
| Категория | Прочее |
| Производитель | Siliup |
| Вес | 1.074 |
| Operating Temperature | -55℃~+150℃ |
| configuration | - |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| Pd- Power Dissipation | 320W |
| RDS(on) | 1.6mΩ@10V |
| Drain to Source Voltage | 110V |
| Number | - |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 340A |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Input Capacitance(Ciss) | 12.22nF |
| Output Capacitance(Coss) | 1.946nF |
| Gate Charge(Qg) | 198nC@10V |